EDC interview Questions

UNIT-5

1. What is the phase differences between input and output signal in a CE amplifier?

(a)0°                (b)45°              (c)180°            (d)90°

Ans:(c)

2. The current gain of a CB amplifier is

(a)less than 1

(b)greater than 1

(c)approximately equal

(d)none of these

Ans:(c)

3. The voltage gain of CC amplifier is

(a)less than 1

(b)greater than 1

(c)equal to 1

(d)none of the above

Ans:(c)

4. The input and output impedence of a CC amplifier  is

(a)large and small

(b)small and large

(c)small and small

(d)large and large

Ans:(a)

5. The power gain of a CC amplifier is approximately equal to

(a)current gain

(b)voltage gain

(c)both

(d)none of these

Ans:(a)

6. The power  gain of CB amplifier  is approximately equal to

(a)current gain

(b)voltage gain

(c)both

(d)none of these above

Ans:(b)

7. Which of the following  amplifiers is known as an emitter followed?

(a)CE amplifier

(b)CC amplifier

(c)CB amplifier

(d)Cascode amplifier

Ans:(c)

8. Which of the amplifier is used in impedence matching?

(a)CB amplifier

(b)CC amplifier

(c)CE amplifier

(d)Cascode amplifier

Ans:(b)

9. In a RC coupled amplifier  for improving the low frequency respose

(a)lower R is provided

(b)more bias is used

(c)less gain is provided

(d)higher c is used

Ans:(d)

10. The voltage gain of a given common-source JFET amplifier does not depend on its

(a)input impedence

(b)amplification factor

(c)dynamic drain resistance

(d)drain load resistance

Ans:(a)

11. The following is a non-inverting amplifier  with voltage gain exceeding unity

(a)CE amplifier

(b)CB amplifier

(c)CC amplifier

(d)none of these

Ans:(b)

12. The B cut-off frequency is defined for

(a)CE amplifier

(b)CB amplifier

(c)CC amplifier

(d)none of these

Ans:(a)

13. The 0 cut-off frequency is defined for

(a)CE amplifier

(b)CB amplifier

(c)CC amplifier

(d)none of these

Ans:(b)

13. compared to B cut-off frequency,0 cut-off frequency is

(a)lower

(b)higher

(c)same

(d)negligible

Ans:(b)

14. In a FET amplifier, the source follower is

(a)CS amplifier

(b)CG amplifier

(c)CD amplifier

(d)none of these

Ans:(c)

15. The voltage gain of CB amplifier has the same magnitude as that of

(a)CE amplifier

(b)CG amplifier

(c)CD amplifier

(d)none of these

Ans:(a)

16. The voltage gain of CB amplifier has the same magnitude as that of

(a)CE amplifier

(b)CC amplifier

(c)Both CE and CC amplifiers

(d)none of these

Ans:(a)

17. The BJT amplifier configuration with the lowest output resistance is

(a)CE amplifier

(b)CB amplifier

(c)CC amplifier

(d)none of these

Ans:(c)

18. The BJT amplifier configuration with the highest output resistance is

(a)CE amplifier

(b)CB amplifier

(c)CC amplifier

(d)none of these

Ans:(c)

19. The BJT amplifier configuration with the lowest input resistance is

(a)CE amplifier

(b)CB amplifier

(c)CC amplifier

(d)none of these

Ans:(b)

20. The BJT amplifier having the highest output resistance is

(a)CE amplifier

(b)CB amplifier

(c)CC amplifier

(d)none of these

Ans:(b)

	.                                                       UNIT-6         1.     A common-gate amplifier is similar in configuration to which BJT amplifier? A. common-emitter B. common-collector C. common-base D. emitter-follower           Answer: Option C           2.  A common-source amplifier is similar in configuration to which BJT amplifier? A. common-base B. common-collector C. common-emitter D. emitter-follower       Answer: Option C   .      3.  A BJT is a ________-controlled device. A. current B. voltage       Answer: Option A 4.    A common-drain amplifier is similar in configuration to which BJT amplifier? A. common-emitter B. common-collector C. common-base D. common-gate Answer: Option B 5.Use the following equation to calculate gm for a JFET having IDSS = 10 mA, VP = –5 V, and VGSQ = –2.5 V. A. 2 mS B. 3 mS C. 4 mS D. 5 mS Answer: Option A 6.  For what value of ID is gm equal to 0.5 gm0? A. 0 mA B. 0.25 IDSS C. 0.5 IDSS D. IDSS Answer: Option B 7.  Where do you get the level of gm and rd for an FET transistor? A. from the dc biasing arrangement B. from the specification sheet C. from the characteristics D. All of the above Answer: Option D 8.  An FET is a ________-controlled device. A. current B. voltage Answer: Option B 9.  What is the input resistance (Rin(source)) of a common-gate amplifier? A. Rs B. C. 1 / gm D. none of the above Answer: Option C 10.  There is a ________º phase inversion between gate and source in a source follower. A. 0 B. 90 C. 180 D. none of the above Answer: Option A 11.  What is the typical value for the input impedance Zi for JFETs? A. 100 k B. 1 M C. 10 M D. 1000 M Answer: Option D 12.  MOSFETs make better power switches than BJTs because they have A. lower turn-off times. B. lower on-state resistance. C. a positive temperature coefficient. D. all of the above Answer: Option D 13.  When VGS = 0.5 Vp gm is ________ the maximum value. A. one-fourth B. one-half C. three-fourths Answer & Explanation Answer: Option B 14.  MOSFET digital switching is used to produce which digital gates? A. inverters B. NOR gates C. NAND gates D. all of the above Answer: Option D .        15. The more horizontal the characteristic curves on the drain characteristics, the ________ the output impedance. A. less B. same C. greater Answer: Option C         16. Which of the following is (are) related to depletion-type MOSFETs? A. can be negative, zero, or positive. B. gm can be greater or smaller than gm0. C. ID can be larger than IDSS. D. All of the above Answer: Option D 17.  The input resistance at the gate of a FET is extremely A. high. B. low. Answer: Option A 18.  FET amplifiers provide ________. A. excellent voltage gain B. high input impedance C. low power consumption D. All of the above Answer: Option D 19.  CMOS digital switches use A. n-channel and p-channel D-MOSFETs in series. B. n-channel and p-channel D-MOSFETs in parallel. C. n-channel and p-channel E-MOSFETs in series. D. n-channel and p-channel E-MOSFETs in parallel. Answer: Option C 20.  What is the range of gm for JFETs? A. 1 S to 10 S B. 100 S to 1000 S C. 1000 S to 5000 S D. 10000 S to 100000 S Answer: Option C